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| SI4804BDY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A) 7.5 6.5 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V D Trench FETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D Symmetrical Buck-Boost DC/DC Converter D1 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: SI4804BDY--E3 (Lead Free) SI4804BDY-T1--E3 (Lead Free with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs 30 "20 7.5 6.0 30 1.7 2.0 1.3 -55 to 150 Steady State Unit V 5.7 4.6 0.9 1.1 0.7 W _C A Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Limits Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 72061 S-32621--Rev. D, 29-Dec-03 www.vishay.com t v 10 sec Steady-State Steady-State Symbol RthJA RthJF Typ 52 93 35 Max 62.5 110 40 Unit _C/W C/W 1 SI4804BDY Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED). Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Drain Source On State Resistanceb Forward Transconductanceb Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V V VDS = 30 V, VGS = 0 V TJ = 85_C V V, VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 7.5 A VGS = 4.5 V, ID = 6.5 A VDS = 15 V, ID = 7.5 A IS = 1 A VGS = 0 V A, 20 0.017 0.024 19 0.75 0 75 1.2 12 0.022 0.030 0.8 3.0 "100 1 15 V nA mA A W S V Symbol Test Condition Min Typa Max Unit Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Source Drain Reverse Recovery Time Qg Qgs Qgd Rg td(on) tr td(off) tf trr IF = 1 7 A di/dt = 100 A/ms 1.7 A, Ch-1 Ch 1 VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, Rg = 6 W 0.5 VDS = 15 V, VGS = 4.5 V, ID = 7.5 A , , 7 2.9 2.5 1.5 9 10 19 9 35 2.6 15 17 30 15 55 ns W 11 nC Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.vishay.com 2 Document Number: 72061 S-32621--Rev. D, 29-Dec-03 SI4804BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 25 I D - Drain Current (A) 20 15 10 5 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) I D - Drain Current (A) VGS = 10 thru 5 V 30 4V 25 20 15 10 5 Transfer Characteristics TC = 125_C 25_C -55_C On-Resistance vs. Drain Current 0.040 r DS(on) - On-Resistance ( W ) 1200 Capacitance 0.030 VGS = 4.5 V 0.020 VGS = 10 V C - Capacitance (pF) 960 Ciss 720 480 Coss 240 Crss 0.010 0.000 0 5 10 15 20 25 30 0 0 5 10 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A r DS(on) - On-Resistance (Normalized) 8 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 6 4 2 0 0 3 6 9 12 15 Qg - Total Gate Charge (nC) Document Number: 72061 S-32621--Rev. D, 29-Dec-03 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 SI4804BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 10 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.06 0.05 0.04 ID = 7.5 A 0.03 0.02 0.01 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage TJ = 150_C 1 TJ = 25_C 0.1 0.0 Threshold Voltage 0.4 0.2 V GS(th) Variance (V) ID = 250 mA -0.0 -0.2 -0.4 -0.6 -0.8 -50 20 Power (W) 60 100 Single Pulse Power, Junction-to-Ambient 80 40 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 Time (sec) 1 10 TJ - Temperature (_C) 100 Safe Operating Area, Junction-to-Foot Limited by rDS(on) 1 ms 10 I D - Drain Current (A) 1 10 ms 100 ms 0.1 TC = 25_C Single Pulse 1s 10 s dc 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com Document Number: 72061 S-32621--Rev. D, 29-Dec-03 4 SI4804BDY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 93_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 2 1 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Document Number: 72061 S-32621--Rev. D, 29-Dec-03 www.vishay.com 5 |
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